ST2318SRG n channel enhancement mode mosfet 3.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST2318SRG 2009. v1 description ST2318SRG is the nchannel logic enhancement mode p ower field effect transistor is produced using high cell density, dmos trench techn ology. this high density process is especially tailored to minimize onstate resista nce. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, a nd low inline power loss are needed in a very small outline surface mount packag e. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code w: week code feature 40v/3.9a, r ds(on) = 42m (typ.) @vgs = 10v 40v/3.5a, r ds(on) = 53m @vgs = 4.5v 40v/2.0a, r ds(on) = 75 m @vgs = 2.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sot23 package design 3 1 2 18yw 3 1 2 d g s
ST2318SRG n channel enhancement mode mosfet 3.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST2318SRG 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage v dss 40 v gatesource voltage v gss 20 v continuous drain currenttj=150 ) t a =25 t a =70 i d 3.9 3.0 a pulsed drain current i dm 10 a continuous source current (diode conduction) i s 1.20 a power dissipation t a =25 t a =70 p d 1.20 0.8 w operation junction temperature t j 150 storgae temperature range t stg 55/150 thermal resistancejunction to ambient r ja 100 /w
ST2318SRG n channel enhancement mode mosfet 3.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST2318SRG 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain source breakdown voltage v (br)dss v gs =0v,i d =250ua 40 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.50 1.2 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss v ds =40v,v gs =0v 1 ua v ds =40v,v gs =0v t j =85 5 drainsource onresistance r ds(on) v gs = 10 v,i d =3. 9 a v gs =4.5v,i d =3.5a v gs =2.5v,i d =2.0a 0.042 0.053 0.075 forward transconductance g fs v ds =15v,i d =6.2a 13 s diode forward voltage v sd i s =2.3a,v gs =0v 0.8 1.2 v dynamic total gate charge q g v ds =15v v gs =10v i d 2.0a 16 24 nc gatesource charge q gs 3 gatedrain charge q gd 2.5 turnon time t d(on) tr v dd =15v r l =15 i d =1.0a v gen =10v r g =6 15 20 ns 6 12 turnoff time t d(off) tf 10 20 40 80
ST2318SRG n channel enhancement mode mosfet 3.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST2318SRG 2009. v1 typical characterictics (25 unless noted)
ST2318SRG n channel enhancement mode mosfet 3.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST2318SRG 2009. v1 typical characterictics (25 unless noted)
ST2318SRG n channel enhancement mode mosfet 3.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST2318SRG 2009. v1 typical characterictics (25 unless noted)
ST2318SRG n channel enhancement mode mosfet 3.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST2318SRG 2009. v1 sot-23 package outline
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